Effect of Electric Field on Transient Characteristics of Luminescence from GaAs/Ga0.6Al0.4As Multi-Quantum-Well Structure
- 1 March 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (3R)
- https://doi.org/10.1143/jjap.25.504
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Electric field induced shifts and lifetimes in GaAs-GaAlAs quantum wellsApplied Physics Letters, 1985
- Transient Response of Photoluminescence for Electric Field in a GaAs/Al0.7Ga0.3As Single Quantum Well: Evidence for Field-Induced Increase in Carrier Life TimeJapanese Journal of Applied Physics, 1985
- Temperature Dependence of Decay Time of Photoluminescence from GaAs/Ga0.6Al0.4As Multi Quantum Well StructuresJapanese Journal of Applied Physics, 1985
- Electric field induced decrease of photoluminescence lifetime in GaAs quantum wellsApplied Physics Letters, 1985
- Effect of an electric field on the luminescence of GaAs quantum wellsPhysical Review B, 1982
- Intrinsic radiative recombination from quantum states in GaAs-AℓxGa1−xAs multi-quantum well structuresSolid State Communications, 1981