An improved electron and hole mobility model for general purpose device simulation

This publication has 19 references indexed in Scilit:

• A new technique for measuring MOSFET inversion layer mobility
  IEEE Transactions on Electron Devices, 1993
• A unified mobility model for device simulation—I. Model equations and concentration dependence
  Solid-State Electronics, 1992
• Physically-based models for effective mobility and local-field mobility of electrons in MOS inversion layers
  Solid-State Electronics, 1991
• The evolution of the MINIMOS mobility model
  Solid-State Electronics, 1990
• The Center Design Optimization System
  AT&T Technical Journal, 1989
• Semi-empirical equations for electron velocity in silicon: Part II—MOS inversion layer
  IEEE Transactions on Electron Devices, 1983
• Relation of drift velocity to low-field mobility and high-field saturation velocity
  Journal of Applied Physics, 1980
• Intersubband scattering effect on the mobility of a Si (100) inversion layer at low temperatures
  Physical Review B, 1979
• Electron scattering in silicon inversion layers by oxide and surface roughness
  Surface Science, 1976
• Scattering Mechanism and Low Temperature Mobility of MOS Inversion Layers
  Japanese Journal of Applied Physics, 1974