Physically-based models for effective mobility and local-field mobility of electrons in MOS inversion layers
- 30 June 1991
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 34 (6) , 545-552
- https://doi.org/10.1016/0038-1101(91)90123-g
Abstract
No abstract availableKeywords
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