Size Influence on the Propagation Loss Induced by Sidewall Roughness in Ultrasmall SOI Waveguides
- 28 June 2004
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 16 (7) , 1661-1663
- https://doi.org/10.1109/lpt.2004.828497
Abstract
Silicon-on-insulator (SOI) optical waveguides with high electromagnetic field confinement suffer from sidewall roughness which is responsible for strong scattering effects. This letter reports a numerical investigation on the size influence of ultrasmall SOI waveguides on the propagation loss due to sidewall roughness. It is shown that for a size smaller than 260 /spl times/ 260 nm the roughness-induced propagation loss decreases. As the optical mode confinement is reduced, a very low loss light coupling from and to a single-mode fiber can be achieved with propagation loss as low as 0.5 dB/cm for a 150 /spl times/ 150 nm cross-sectional waveguide.Keywords
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