Positron annihilation in SiO2/Si structure at low temperature
- 1 September 1995
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 78 (5) , 3269-3273
- https://doi.org/10.1063/1.360016
Abstract
Annihilation characteristics of positrons in SiO2/Si structure were studied by using a monoenergetic positron beam in the temperature range between 50 K and room temperature. In the SiO2 film, positrons formed positronium (Ps) and they annihilated from localized states in open spaces. Below 100 K, the Ps formation was found to be suppressed. This fact was attributed to the trapping of positrons by point defects in the SiO2 film at low temperature. The depth distribution of such traps was not homogeneous; its concentration in the central region of the SiO2 film was higher than that in the regions near the surface or the interface. The potential of monoenergetic positrons for the detection of the point defects provides unique information for depth distributions of hole traps in SiO2 films.This publication has 10 references indexed in Scilit:
- Positron trapping by defects in vitreous silica at low temperatureJournal of Physics: Condensed Matter, 1995
- Characterization of defects in Si and SiO2−Si using positronsJournal of Applied Physics, 1994
- Application of positron age-momentum correlation measurement to the study of defects in electron irradiated synthetic silica glassJournal of Applied Physics, 1994
- Defects in electron irradiated vitreous SiO2probed by positron annihilationJournal of Physics: Condensed Matter, 1994
- Positronium formation in SiO2 films grown on Si substrates studied by monoenergetic positron beamsJournal of Applied Physics, 1994
- SiO2 films deposited on Si substrates studied by monoenergetic positron beamsJournal of Applied Physics, 1994
- Positron annihilation in a metal-oxide semiconductor studied by using a pulsed monoenergetic positron beamJournal of Applied Physics, 1993
- Characterization of Separation-by-Implanted-Oxygen Wafers with Monoenergetic Positron BeamsJapanese Journal of Applied Physics, 1993
- Vacancy-type defects in crystalline and amorphous SiO2Journal of Applied Physics, 1993
- Electron trapping in SiO2 at 295 and 77 °KJournal of Applied Physics, 1979