Temperature dependence of the electron emission of amorphous silica under intense laser irradiation
- 1 March 1985
- journal article
- Published by Elsevier in Optics Communications
- Vol. 53 (3) , 189-193
- https://doi.org/10.1016/0030-4018(85)90329-3
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Phenomenology of picosecond heating and evaporation of silicon surfaces coated with SiO2 layersApplied Physics A, 1984
- Laser-induced sputtering of oxides and compound semiconductorsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1984
- Dependence of laser-induced damage of surface layers of GaP on pulse width and wavelengthApplied Physics Letters, 1983
- Surface Processes Occurring during Breakdown of High-Voltage DevicesIEEE Transactions on Electrical Insulation, 1983
- Electron-energy distribution in silicon under pulsed-laser excitationPhysical Review B, 1983
- Thermally assisted multiphoton photoelectric emission from tungstenOptics Communications, 1980
- A new effect in multiphoton photoeffect of a gold surface induced by picosecond laser pulsesApplied Physics Letters, 1978
- The electronic structure of SiO2: A review of recent spectroscopic and theoretical advancesJournal of Non-Crystalline Solids, 1977
- Multiphoton electron emission processes induced by different kinds of ultrashort laser pulsesOptics Communications, 1974