Dependence of laser-induced damage of surface layers of GaP on pulse width and wavelength

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Abstract
Disorder induced by irradiation with a laser pulse on surface layers of GaP has been studied by means of the Rutherford backscattering channeling technique. It is found that a 0.6-μs laser pulse near the direct band gap and a 15-ns laser pulse near the indirect band gap induce damages more pronounced than a 15-ns laser pulse near the direct band gap of the same fluence. Moreover, decomposition of the surface layers into Ga-rich and P layers is found to be induced by irradiation with a 0.6-μs laser pulse. It is suggested that such a decomposition occurs when heating is not substantial.