Well-Resolved Band-Edge Photoluminescence from Strained Si1–xGex Layers Grown by Rapid Thermal Chemical Vapor Deposition
- 1 January 1991
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Temperature control of silicon-germanium alloy epitaxial growth on silicon substrates by infrared transmissionJournal of Applied Physics, 1991
- Direct transition energies in strained ten-monolayer Ge/Si superlatticesPhysical Review Letters, 1990
- Intense photoluminescence between 1.3 and 1.8 μm from strained Si1−xGex alloysApplied Physics Letters, 1990
- Detection of magnetic resonance on photoluminescence from a Si/Si_{1-x}Ge_{x} strained-layer superlatticePhysical Review Letters, 1990
- Photoluminescence in short-period Si/Ge strained-layer superlatticesPhysical Review Letters, 1990
- Near-band-gap photoluminescence of Si-Ge alloysPhysical Review B, 1989
- Electronic properties of the (100) (Si)/(Ge) strained-layer superlatticesPhysical Review B, 1988
- Theoretical calculations of heterojunction discontinuities in the Si/Ge systemPhysical Review B, 1986
- Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSuperlatticesPhysical Review Letters, 1985
- Theory of direct optical transitions in an optical indirect semiconductor with a superlattice structureApplied Physics A, 1974