Detection of magnetic resonance on photoluminescence from a Si/Si_{1-x}Ge_{x} strained-layer superlattice

Optically detected magnetic resonance has been employed for the first time on photoluminescence from a Si/${\mathrm{Si}}_{1\mathrm{-}\mathit{x}}$ ${\mathrm{Ge}}_{\mathit{x}}$ strained-layer superlattice. Emission bands occur at 0.87 and 0.8 eV. One of the resonances is anisotropic with ${\mathit{g}}_{\mathrm{?}}$=4.46±0.05 and ${\mathit{g}}_{\mathrm{\perp }}$<0.4 and is assigned to holes of the ${\mathit{J}}_{\mathit{z}}$=±3/2 valence band in the SiGe layers. This result demonstrates that at least part of the emission must originate from the superlattice region of these structures.