Optically detected magnetic resonance study of antisite-to-acceptor and related recombination processes in as-grown InP:Zn

The paramagnetic state of the phosphorus-on-indium antisite (${\mathrm{P}}_{\mathrm{In}}$) has been observed by optically detected magnetic resonance (ODMR) in as-grown zinc-doped indium phosphide (zinc concentration ≊${10}^{16}$ ${\mathrm{cm}}^{\mathrm{-}3}$). The antisite resonance is seen both as enhancing the antisite-to-acceptor photoluminescence (PL) at 0.8 eV and as quenching the shallow-donor to acceptor PL at 1.37 eV. The g value (g=2.006) and hyperfine constant(A=0.100 ${\mathrm{cm}}^{\mathrm{-}1}$) are in good agreement with previous results on electron-irradiated p-type InP. The dependence of the ODMR on microwave power, microwave modulation frequency, and photoexcitation intensity is examined, and a rate-equation model is developed for the important recombination processes. The experimental results suggest that the antisite-to-acceptor recombination rate is approximately 4×${10}^4$ ${\mathrm{s}}^{\mathrm{-}1}$; the antisite electron spins are unthermalized, but recombine with spin-thermalized holes; and the antisite concentration may be greater than 2×${10}^{15}$ ${\mathrm{cm}}^{\mathrm{-}3}$. Two other resonances are also observed, a shallow donor resonance (g=1.217) and an unidentified broad resonance (g=2.0).