On the prospect of as-grown semi-insulating InP: ODMR of the PInantisite
- 10 June 1985
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 18 (16) , L473-L476
- https://doi.org/10.1088/0022-3719/18/16/006
Abstract
ODMR investigations of e-irradiated InP:Zn show that the PIn antisite resonance is associated with emission at 0.89 eV. The authors assign this recombination process to the capture of the second electron at the PIn4+ centre. In analogy with GaAs where the EL2 centre pins the Fermi level at mid-gap, they propose that the PIn3+ (D10) level at (Ec-0.89 eV) should allow as grown semi-insulating InP to be prepared by off-stoichiometric growth.Keywords
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