Optical detection of the PInantisite resonances in InP
- 20 October 1984
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 17 (29) , L793-L797
- https://doi.org/10.1088/0022-3719/17/29/007
Abstract
The PIn antisite centre has been observed in electron-irradiated InP by monitoring the magnetic circular dichroism at 0.95 mu m (1.3 eV). A direct comparison of the EPR and the MDC-ODMR results shows that the optical method is approximately 100 times more sensitive. A new broad resonance with g=1.93+or-0.01, Delta B=75 mT which may be due to vacancies has been observed via an absorption at 1.08 mu m (1.15 eV). The PIn resonances have not been observed in undoped InP.Keywords
This publication has 8 references indexed in Scilit:
- Identification of EL2 in GaAs as the AsGaantisite centreJournal of Physics C: Solid State Physics, 1984
- Electron paramagnetic resonance identification of the phosphorus antisite in electron-irradiated InPApplied Physics Letters, 1984
- Optical Properties of As-Antisite andDefects in GaAsPhysical Review Letters, 1984
- Electronic Spin of the Ga Vacancy in GaPPhysical Review Letters, 1983
- Identification of AsGa antisites in plastically deformed GaAsJournal of Applied Physics, 1982
- Optically detected magnetic resonance (O.D.M.R.) investigations of recombination processes in semiconductorsAdvances in Physics, 1981
- Submillimeter EPR evidence for the As antisite defect in GaAsSolid State Communications, 1980
- ESR detection of antisite lattice defects in GaP, CdSiP2, and ZnGeP2Applied Physics Letters, 1976