In Situ Measurement of Stress. Included During Annealing, in A1-2%Cu Thin Films
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- I n s i t u stress measurement of refractory metal silicides during sinteringJournal of Applied Physics, 1984
- The temperature dependence of stresses in aluminum films on oxidized silicon substratesThin Solid Films, 1978
- Thermal Cycling and Surface Reconstruction in Aluminum Thin FilmsJournal of the Electrochemical Society, 1969
- The tension of metallic films deposited by electrolysisProceedings of the Royal Society of London. Series A, Containing Papers of a Mathematical and Physical Character, 1909