Direct Measurement of Built-in Voltage in MOS Structures
- 1 December 1971
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 42 (13) , 5865-5868
- https://doi.org/10.1063/1.1660029
Abstract
It is shown that it is possible to measure directly, using a photoelectric technique, the built‐in voltage in a MOS structure. The experimentally measured values, using this method, are compared with values obtained by another method, and the validity of this method is established.This publication has 6 references indexed in Scilit:
- Silicon-oxide interface studies by a photoelectric techniqueProceedings of the IEEE, 1969
- EFFECT OF HEATING UNDER BIAS ON PHOTOELECTRIC THRESHOLD IN MOS STRUCTUREApplied Physics Letters, 1968
- The Built-in Voltage and the Charge Distributions in the Oxide of MOS StructureJapanese Journal of Applied Physics, 1967
- Barrier energies in metal-silicon dioxide-silicon structuresJournal of Physics and Chemistry of Solids, 1966
- Photoemission of Electrons from Silicon and Gold into Silicon DioxidePhysical Review B, 1966
- Photoemission of Electrons from Silicon into Silicon DioxidePhysical Review B, 1965