Optical Studies of Defect Structures in Cadmium Sulfide and Cadmium Selenide
- 1 September 1964
- journal article
- Published by Optica Publishing Group in Applied Optics
- Vol. 3 (9) , 1015-1021
- https://doi.org/10.1364/ao.3.001015
Abstract
Several optical techniques have been used to study defect structures in cadmium sulfide and cadmium selenide. The results are compared with corresponding and ancillary electron optical work. A discussion of the etching characteristics of these materials is given. The results suggest coherent phase precipitation in copper-doped samples and support Gilman’s explanation of etch step generation.Keywords
This publication has 13 references indexed in Scilit:
- Improved Techniques for Studying the Growth of CdS CrystalsJournal of Applied Physics, 1963
- Edge Dislocation of CdS CrystalsJournal of the Physics Society Japan, 1962
- Vapor-Phase Growth of Single Crystals of II–VI CompoundsJournal of Applied Physics, 1961
- Etch pits and dislocations in cadmium sulphide crystalsBritish Journal of Applied Physics, 1960
- The Dislocation Etch Pits of CdS CrystalsJournal of the Physics Society Japan, 1960
- Dislocations in Two Types of CdS CrystalsJournal of Applied Physics, 1960
- Study of cadmium sulphide crystals grown from the vapour phase in a stream of argonBritish Journal of Applied Physics, 1959
- Versetzungen in CdS-Kristallen und ihre Bedeutung für die PhotoleitfähigkeitZeitschrift für Naturforschung A, 1958
- Crystal Growth Mechanism in Cadmium Sulfide CrystalsJournal of Applied Physics, 1958
- The Photo-Conductivity of "Incomplete Phosphors"Physical Review B, 1947