Damage created by high-current-density implants of phosphorus into ?100? and ?111? silicon wafers
- 1 November 1987
- journal article
- solids and-materials
- Published by Springer Nature in Applied Physics A
- Vol. 44 (3) , 213-218
- https://doi.org/10.1007/bf00616691
Abstract
No abstract availableKeywords
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