Effect of oxygen on In0.53Ga0.47As films grown by molecular beam epitaxy

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Abstract
Incomplete removal of the native oxide from the surface of the InP substrate before growth leads to oxygen incorporation in subsequently grown molecular beam epitaxial In0.53Ga0.47As films. Secondary ion mass spectroscopy profiles indicate highest concentrations near the InP substrate and the InGaAs surface with lower levels in the middle of the epilayer on samples which show oxygen contamination. Electrically such films have low electron mobilities (μ300 K2/V s) and high net free‐carrier densities (1016 cm−3<n300 K17 cm−3) with substantial freezeout as the temperature is lowered from 300 to 77 K. Photoluminescence from layers with high oxygen incorporation shows low intensity but with no lines or bands that can be ascribed to oxygen at this time.