Lattice site changes of ion implanted 8Li in Si studied by alpha emission channeling
- 1 January 1992
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 63 (1-2) , 91-94
- https://doi.org/10.1016/0168-583x(92)95175-q
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Emission channeling and blockingPhysics Reports, 1991
- Site changes of ion-implanted Li in GaAs below 300 KPhysical Review Letters, 1989
- Position-sensitve semiconductor detectorsNuclear Instruments and Methods, 1979
- The use of neutron induced reactions for light element profiling and lattice localizationNuclear Instruments and Methods, 1978
- Angular dependence of the backscattering yield from Si crystals in double and single alignmentRadiation Effects, 1976
- Electron Paramagnetic Resonance Studies of a System with Orbital Degeneracy: The Lithium Donor in SiliconPhysical Review B, 1970
- Electrical and physical measurements on silicon implanted with channelled and nonchanneled dopant ionsCanadian Journal of Physics, 1968
- Excitation Spectra of Lithium Donors in Silicon and GermaniumPhysical Review B, 1965
- Recombination Kinetics for Thermally Dissociated Li–B Ion Pairs in SiJournal of Applied Physics, 1961
- Diffusion Rate of Li in Si at Low TemperaturesPhysical Review B, 1960