Growth of a delta-doped silicon layer by molecular beam epitaxy on a charge-coupled device for reflection-limited ultraviolet quantum efficiency
- 31 August 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (9) , 1084-1086
- https://doi.org/10.1063/1.107675
Abstract
We have used low‐temperature silicon molecular beam epitaxy to grow a δ‐doped silicon layer on a fully processed charge‐coupled device (CCD). The measured quantum efficiency of the δ‐doped backside‐thinned EG&G Reticon CCD is in agreement with the reflection limit for light incident on the back surface in the spectral range of 260–600 nm. The 2.5 nm silicon layer, grown at 450 °C, contained a boron δ‐layer with surface density ∼2×1014 cm−2. Passivation of the surface was done by steam oxidation of a nominally undoped 1.5 nm Si cap layer. The UV quantum efficiency was found to be uniform and stable with respect to thermal cycling and illumination conditions.Keywords
This publication has 17 references indexed in Scilit:
- Epitaxial growth of p+ silicon on a backside-thinned CCD for enhanced UV responsePublished by SPIE-Intl Soc Optical Eng ,1992
- 370 °C clean for Si molecular beam epitaxy using a HF dipApplied Physics Letters, 1991
- Simplified model of the back surface of a charge-coupled devicePublished by SPIE-Intl Soc Optical Eng ,1991
- Low-temperature growth of Ge on Si(100)Applied Physics Letters, 1991
- Limited thickness epitaxy in GaAs molecular beam epitaxy near 200 °CApplied Physics Letters, 1991
- Low-temperature Si molecular beam epitaxy: Solution to the doping problemApplied Physics Letters, 1990
- Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxyThin Solid Films, 1989
- Silicon surface passivation by hydrogen termination: A comparative study of preparation methodsJournal of Applied Physics, 1989
- Charge-Coupled Device Pinning TechnologiesPublished by SPIE-Intl Soc Optical Eng ,1989
- Thinned Backside Illuminated CCDs For Ultraviolet ImagingPublished by SPIE-Intl Soc Optical Eng ,1988