Dissociation energies of acceptor-hydrogen complexes in InP

Publisher Website
Google Scholar
Abstract
The dissociation energies of Zn‐H, Cd‐H, and Mg‐H complexes in p‐InP have been determined from the reactivation kinetics of these passivated dopants in reverse‐biased Au Schottky diodes. The reactivation process is first order under these conditions, yielding thermal dissociation energies of 1.20±0.10 eV for Zn acceptors, 1.40±0.10 eV for Cd acceptors, and 1.35±0.10 eV for Mg acceptors. These results are consistent with the model in which the hydrogen passivates the acceptor by attaching to a neighboring P atom, leaving the acceptor essentially threefold coordinated. They also indicate that acceptor‐hydrogen retrapping during cool down after epitaxial growth of p‐InP layers is the primary cause of apparently stable acceptor passivation seen in such layers.