Unintentional hydrogen incorporation in crystals

This publication has 29 references indexed in Scilit:

• Vibrational properties of hydrogen in compound semiconductors
  Physica B: Condensed Matter, 1991
• Structure and reorientation kinetics of hydrogen passivated shallow impurities in silicon from vibrational spectroscopy
  Physica B: Condensed Matter, 1991
• Electronic level of interstitial hydrogen in GaAs
  Physical Review Letters, 1990
• Hydrogen-related center with tetrahedral symmetry in ion-implanted silicon
  Physical Review B, 1989
• Hydrogen in Crystalline Semiconductors
  Annual Review of Materials Science, 1988
• GaInAs junction FET fully dry etched by metal organic reactive ion etching technique
  Electronics Letters, 1987
• Hydrogen in crystalline semiconductors
  Applied Physics A, 1987
• The isotope study of the SiH absorption peaks in the FZSi grown in hydrogen atmosphere
  Solid State Communications, 1985
• The Nature of Two Intense Si–H IR Stretching Bands in FZ‐Si:H
  Physica Status Solidi (b), 1985
• Oxygen-related SiH IR stretching bands in Fz-Si grown in a hydrogen atmosphere
  Materials Letters, 1985