Planar InP/GaInAsP/GaInAs buried-structure avalanche photodiode
- 1 October 1984
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (7) , 759-761
- https://doi.org/10.1063/1.95395
Abstract
A new planar InP/GaInAsP/GaInAs buried‐structure avalanche photodiode, which has a buried active region and an n−‐InP guardring region, has been developed. A useful guardring effect and a uniform multiplication are obtained in the multiplication range of up to 30. The diode shows a dark current of 10 nA at a bias of 90% of the breakdown voltage, a maximum avalanche gain of 50 under 1.3‐μm light irradiation, and a gain‐bandwidth product of about 16 GHz.Keywords
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