X-ray diffraction topographs of silicon crystals with superposed oxide film. III. Intensity distribution
- 1 October 1973
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (10) , 4405-4412
- https://doi.org/10.1063/1.1661973
Abstract
Following previous studies by Kato and Patel under the same title, the intensity distribution of section and traverse topographs of a silicon single crystal partly covered with a superposed oxide film is studied theoretically. The results of the basic theory are summarized and a practical computation procedure is outlined. The details of the characteristic black and white contrast observed in section topographs can be fairly accurately computed. The elasticity solution used by Blech and Meieran for the strain distribution is essentially correct in slightly distorted regions, where the fringes are observed. A strain relaxation must be introduced in the highly distorted region, close to the oxide boundary, in order to succesfully compute the observed intensity contrast.This publication has 8 references indexed in Scilit:
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