Determination of atomic positions in the GaSb(110) and InAs(110) surfaces by medium-energy ion blocking
- 1 February 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 166 (1) , 183-205
- https://doi.org/10.1016/0039-6028(86)90540-6
Abstract
No abstract availableThis publication has 29 references indexed in Scilit:
- Atomic geometry and dynamics of the GaSb(110) surfacePhysical Review B, 1984
- Application of high energy ion channeling to GaAs(110), Au-GaAs(110) and Pd-GaAs(110)Surface Science, 1984
- Ion-beam crystallography of the GaSb (110) surfaceNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1984
- Displacements parallel to the surface of reconstructed GaAs(110)Journal of Vacuum Science & Technology B, 1984
- Dynamical analysis of low-energy electron-diffraction intensities from InAs(110)Physical Review B, 1983
- Surface geometries from channeling and blockingJournal of Vacuum Science & Technology A, 1983
- Atomic geometries of compound semiconductor surfaces and interfacesJournal of Vacuum Science & Technology A, 1983
- Atomic geometry of GaSb(110): Determination via elastic low-energy electron diffraction intensity analysisPhysical Review B, 1983
- Intrinsic unoccupied surface states at GaAs(110)Surface Science, 1982
- Angle-resolved photoemission from GaAs (110) surface statesPhysics Letters A, 1978