Arsenic passivation of InP surface for metal-insulator-semiconductor devices based on both ultra-high vacuum technique and chemical procedure
- 1 January 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (1) , 257-260
- https://doi.org/10.1063/1.338867
Abstract
Two passivation treatments of InP surface are presented: (i) thermal treatment under an arsenic partial pressure by molecular-beam epitaxy technique, and (ii) a new As-based aqueous chemical treatment. Both result in similarly improved electronic and physicochemical properties of the InP surface. The fast interface state density is reduced, the drift phenomena are practically suppressed and the thermal stability is greatly enhanced.This publication has 16 references indexed in Scilit:
- Consequences of anion vacancy nearest-neighbor hopping in III-V compound semiconductors: Drift in InP metal-insulator-semiconductor field-effect transistorsJournal of Applied Physics, 1985
- Evidence for interfacial defects in metal-insulator-InP structures induced by the insulator depositionJournal of Applied Physics, 1985
- Channel mobility enhancement in InP metal-insulator-semiconductor field-effect transistorsApplied Physics Letters, 1985
- Chemical Vapor Deposition of Phosphorus Nitride and Related CompoundsJapanese Journal of Applied Physics, 1984
- Interfacial constraints on device performanceJournal of Vacuum Science & Technology B, 1984
- High mobility insulated gate transistors on InPJournal of Vacuum Science & Technology B, 1984
- Electrical properties of Al2O3 and AlPxOy dielectric layers on InPThin Solid Films, 1984
- Molecular beam epitaxial growth of uniform In0.53Ga0.47As on InP with a coaxial In-Ga ovenJournal of Applied Physics, 1981
- Arsenic stabilization of InP substrates for growth of GaxIn1−xAs layers by molecular beam epitaxyApplied Physics Letters, 1980
- n -channel inversion-mode InP m.i.s.f.e.t.Electronics Letters, 1978