Electric field dependence of the binding energy of shallow donors in GaAs-As quantum wells
- 15 August 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 32 (4) , 2378-2381
- https://doi.org/10.1103/physrevb.32.2378
Abstract
We report theoretical results on the electric field dependence of the impurity binding energy in quantum-well structures. The field is assumed to be constant and applied parallel to the growth axis. Several impurity positions are considered. As a result of the field-induced electronic polarization, the impurity binding energy may be decreased or increased depending on the impurity location in the quantum well.Keywords
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