Low-Temperature Silicon Epitaxial Growth by Photochemical Vapor Deposition Using Vacuum Ultraviolet Light

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Abstract
Homoepitaxial Si growth by photochemical vapor deposition (photo-CVD) of Si2H6 using vacuum ultraviolet (VUV) light from a microwave-excited D2 lamp has been investigated. Epitaxial Si films can be obtained by this method at a growth temperature of 650°C, which is much lower than that used in conventional thermal CVD. A surface cleaning method of Si substrates by VUV light irradiation has been proposed. It was found from AES and RHEED studies that light irradiation prior to film growth is effective for the elimination of oxide and carbon contaminants on the substrate. Crystalline quality of grown films and dissociation mechanism of Si2H6 by VUV light are also described.