Photo-Ionizalion Assisted Photo-CVD of Silicon Nitride Film by Microwave-Excited Deuterium Lamp
- 1 September 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (9A) , L728-730
- https://doi.org/10.1143/jjap.25.l728
Abstract
Silicon nitride films have been formed using a photo-CVD apparatus with a microwave-excited deuterium lamp. The BHF etching rate, 40–70 Å/ min, deposited at 320°C is lower by less than one-tenth than that deposited using a conventional low-pressure mercury lamp, indicating formation of a high density film. The deposition rate has been enhanced dramatically from 13 Å/min to 100 Å/min by incorporating the photo-ionization assisted effect, which is brought about by an ionization of a substrate surface, ions formed by collisions of reactant gases with photoelectrons and photo-ionized ions.Keywords
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