Noise Observed on Semiconductor Surfaces
- 20 October 1969
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 23 (16) , 912-913
- https://doi.org/10.1103/physrevlett.23.912
Abstract
The noise on etched silicon surfaces can be influenced by adsorption and desorption of water and by heating processes. The observed time constants are the same as the constants of chemisorption. In particular a correlation of noise to the density of active centers of chemisorption is found.
Keywords
This publication has 8 references indexed in Scilit:
- SURFACE-STATE RELATED l/f NOISE IN p-n JUNCTIONS AND MOS TRANSISTORSApplied Physics Letters, 1968
- A theory of 1f noise at semiconductor surfacesSolid-State Electronics, 1968
- TRITIUM-LABELED FIELD-INDUCED PROTON TRANSPORT IN SiO2 FILMSApplied Physics Letters, 1967
- SPACE-CHARGE-LIMITED IONIC CURRENTS IN SILICON DIOXIDE FILMSApplied Physics Letters, 1967
- Evidence of the Surface Origin of theNoisePhysical Review Letters, 1966
- Slow surface states and chemisorptionJournal of Physics and Chemistry of Solids, 1965
- Long-term relaxation of the surface conductivity of siliconSurface Science, 1965
- A Possible Mechanism forNoise Generation in Semiconductor FilamentsPhysical Review B, 1953