Zn diffusion enhancement of interdiffusion in a GaInAsP-InP heterostructure
- 23 October 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (17) , 1768-1770
- https://doi.org/10.1063/1.102213
Abstract
The influence of concurrent Zn diffusion on the interdiffusion in a Gax In1−x Asy P1−y ‐InP heterostructure (x=0.28, y=0.61) was investigated using Auger electron spectroscopy and secondary‐ion mass spectrometry. The measured profiles showed that the Zn diffusion (600 °C, 1–4 h) predominantly enhanced the cation (In‐Ga) interdiffusion. The result could not be interpreted by the Zn‐vacancy complex model. Under conditions of a group V overpressure, our results suggest that cation interstitials may control both the rate of Zn diffusion and the mixing of the group III sublattices in the InP‐based alloy system.Keywords
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