Rheed intensity oscillations during silicon MBE growth
- 3 August 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 174 (1-3) , 651-657
- https://doi.org/10.1016/0039-6028(86)90487-5
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Well defined superlattice structures made by phase-locked epitary using RHEED intensity oscillationsSuperlattices and Microstructures, 1985
- RHEED oscillation studies of MBE growth kinetics and lattice mismatch strain-induced effects during InGaAs growth on GaAs(100)Journal of Vacuum Science & Technology B, 1984
- Damped oscillations in reflection high energy electron diffraction during GaAs MBEJournal of Vacuum Science & Technology B, 1983
- Dynamics of film growth of GaAs by MBE from Rheed observationsApplied Physics A, 1983
- Epitaxy of Si(111) as studied with a new high resolving LEED systemSurface Science, 1982