Detection of deeply buried thin oxide layer by means of Auger depth profiling
- 1 July 1997
- journal article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 68 (7) , 2847-2849
- https://doi.org/10.1063/1.1148206
Abstract
Using our dedicated Auger depth profiling device (applying a grazing angle of incidence 84° and low ion energy 1 keV of Ar and specimen rotation), we could detect a thin oxide layer buried by about a 180 nm thick layer. Due to the good depth resolution achieved, the oxide layer could be localized to the interface. The oxide layer thickness was determined for two independent specimens to be about 2 and 3 ML.This publication has 9 references indexed in Scilit:
- Surface morphology development during ion sputtering: roughening or smoothing?Surface Science, 1996
- Study of Low-energy Atomic Mixing by Means of Auger Depth Profiling, XTEM and TRIM Simulation on Ge/Si Multilayer SystemSurface and Interface Analysis, 1996
- Auger Depth Profile Analysis of Deeply Buried InterfacesPhysica Status Solidi (a), 1994
- Study of ion mixing during Auger electron spectroscopy depth profiling of Ge–Si multilayer systemJournal of Vacuum Science & Technology A, 1994
- Experimental study of low energy ion mixingVacuum, 1994
- Interlaboratory comparison of the depth resolution in sputter depth profiling of Ni/Cr multilayers with and without sample rotation using AES, XPS, and SIMSSurface and Interface Analysis, 1993
- Improved depth resolution of AES in‐depth profilingSurface and Interface Analysis, 1992
- Growth of Ge/Si Amorphous Superlattices by Dual-Target DC Magnetron SputteringMRS Proceedings, 1992
- Calculations of electorn inelastic mean free paths. II. Data for 27 elements over the 50–2000 eV rangeSurface and Interface Analysis, 1991