Magnetoresistive determination of localization effects in InSb
- 15 April 1983
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 27 (8) , 5188-5191
- https://doi.org/10.1103/physrevb.27.5188
Abstract
We have made magnetoresistance measurements in samples of in the temperature range 0.05-1.5 K. The carrier densities of the samples studied were ∼ 3.1 × and 2.7 × /. At low fields ( is 0.55 of that expected from theory. Interaction effects could explain the discrepancy. The inelastic scattering localization rate is determined to vary as .
Keywords
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