Characterization of SiO2 layers thermally grown on 4H-SiC using high energy photoelectron spectroscopy
- 16 August 1999
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 150 (1-4) , 137-142
- https://doi.org/10.1016/s0169-4332(99)00238-x
Abstract
No abstract availableKeywords
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