Fabrication and characterization of MOS devices on 3CSiC films grown by reactive magnetron sputtering on Si(111) substrates
- 1 October 1996
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 287 (1-2) , 252-257
- https://doi.org/10.1016/s0040-6090(96)08788-3
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Growth of high-quality 3C-SiC epitaxial films on off-axis Si(001) substrates at 850 °C by reactive magnetron sputteringApplied Physics Letters, 1994
- Growth of epitaxial 3C-SiC films on (111) silicon substrates at 850 °C by reactive magnetron sputteringJournal of Applied Physics, 1993
- Comparison of 6H-SiC, 3C-SiC, and Si for power devicesIEEE Transactions on Electron Devices, 1993
- Photoconductivity of single-crystal 3C-SiC films excited by ultrashort light pulsesSemiconductor Science and Technology, 1992
- Characterisation of ion-implanted pn-junction diodes in β-SiC films grown on (100) silicon substrates by reactive magnetron sputteringDiamond and Related Materials, 1992
- Composition and structure of epitaxial β-SiC films grown by reactive magnetron sputtering on Si(100) substratesMaterials Science and Engineering: B, 1992
- Au schottky barrier diodes on β-SiC thin films deposited on silicon substrates by reactive magnetron sputtering techniqueJournal of Electronic Materials, 1991
- Si hetero-bipolar transistor with a fluorine-doped SiC emitter and a thin, highly doped epitaxial baseIEEE Transactions on Electron Devices, 1990
- Carbonization process for low-temperature growth of 3C-SiC by the gas-source molecular-beam epitaxial methodJournal of Applied Physics, 1990
- Production of large-area single-crystal wafers of cubic SiC for semiconductor devicesApplied Physics Letters, 1983