Composition and structure of epitaxial β-SiC films grown by reactive magnetron sputtering on Si(100) substrates
- 15 January 1992
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 11 (1-4) , 61-66
- https://doi.org/10.1016/0921-5107(92)90191-b
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Epitaxial growth and doping of and device development in monocyrstalline β-SiC semiconductor thin filmsThin Solid Films, 1989
- Low-temperature and selective growth of β-SiC using the SiH2Cl2/C3H8/H2/HCl gas systemJournal of Applied Physics, 1989
- Incorporation of accelerated low-energy (50–500 eV) In+ ions in Si(100) films during growth by molecular-beam epitaxyJournal of Applied Physics, 1989
- Interface structures in beta-silicon carbide thin filmsApplied Physics Letters, 1987
- Theoretically predicted and experimentally determined effects of the Si/(Si+C) gas phase ratio on the growth and character of monocrystalline beta silicon carbide filmsJournal of Applied Physics, 1986
- Cross‐Section preparation for tem of film‐substrate combinations with a large difference in sputtering yieldsJournal of Electron Microscopy Technique, 1986
- Epitaxial growth of β-SiC single crystals by successive two-step CVDJournal of Crystal Growth, 1984
- Production of large-area single-crystal wafers of cubic SiC for semiconductor devicesApplied Physics Letters, 1983
- IVA-8 heteroepitaxial growth of cubic silicon carbide on foreign substratesIEEE Transactions on Electron Devices, 1981
- Single−crystal β−SiC films by reactive sputteringApplied Physics Letters, 1975