Carbonization process for low-temperature growth of 3C-SiC by the gas-source molecular-beam epitaxial method
- 1 July 1990
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (1) , 101-106
- https://doi.org/10.1063/1.347099
Abstract
Using the carbonization process, single-crystalline SiC films were grown at substrate temperature (Tsub) in the range of 750–1050 °C by the gas-source molecular-beam epitaxial method. This process was performed by using C2H4 gas and a special growth method in which the temperature was raised at a predetermined rate (RT) during growth. To realize the growth of single-crystalline carbonized films, it was found that a C2H4 gas pressure PC2H4=8×10−5 Torr and rising rate RT=25–25/3 °C/min were necessary. After the carbonization process, essential growth of SiC films using SiHCl3 and C2H4 gases in the range of gas pressure ratios PSiHCl3/PC2H4= (1)/(3) –5 (PSiHCl3=1–5×10−5 Torr) at Tsub=1000 °C was performed. In these all experimental ranges, single-crystalline 3C-SiC films could be grown.This publication has 12 references indexed in Scilit:
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