Grounded load complementary FET circuits: Sceptre analysis
- 1 August 1973
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 8 (4) , 282-284
- https://doi.org/10.1109/jssc.1973.1050397
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- n-channel ion-implanted enhancement/depletion FET circuit and fabrication technologyIEEE Journal of Solid-State Circuits, 1973
- A high-performance N-channel MOSLSI using depletion-type load elementsIEEE Journal of Solid-State Circuits, 1972