Dynamical observation of room temperature interfacial reaction in metal-semiconductor system by Auger electron spectroscopy
- 1 July 1979
- journal article
- Published by Elsevier in Surface Science
- Vol. 86, 706-710
- https://doi.org/10.1016/0039-6028(79)90450-3
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Chemical effect in (LVV) Auger spectra of third-period elements (Al, Si, P, and S) dissolved in copperApplied Physics Letters, 1979
- Room-temperature interfacial reaction in Au-semiconductor systemsApplied Physics Letters, 1977
- Electron energy loss spectroscopy of the Si(111)—simple-metal interfacePhysical Review B, 1977
- Photoemission study of the formation of Schottky barriersApplied Physics Letters, 1975
- Chemical bonding at metal-semiconductor interfacesJournal of Vacuum Science and Technology, 1974
- Microscopic theory of covalent-ionic transition at metal-semiconductor interfacesSolid State Communications, 1973
- LOW-TEMPERATURE MIGRATION OF SILICON IN THIN LAYERS OF GOLD AND PLATINUMApplied Physics Letters, 1971
- FUNDAMENTAL TRANSITION IN THE ELECTRONIC NATURE OF SOLIDSPhysical Review Letters, 1969