Distribution of electronic gap states in a-Si:C:H with low carbon content
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 137-138, 855-858
- https://doi.org/10.1016/s0022-3093(05)80254-6
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Properties of hydrogenated amorphous silicon carbide films prepared by plasma-enhanced chemical vapor depositionThin Solid Films, 1989
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- Optical modulation spectroscopy of amorphous semiconductorsPhilosophical Magazine Part B, 1985