High-temperature stability of platinum silicide associated with fluorine implantation
- 1 April 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (7) , 3530-3533
- https://doi.org/10.1063/1.345327
Abstract
High-temperature stability of the F+- or BF+2 -implanted PtSi thin film was investigated. For the PtSi films that received F+ implantation, the film characteristics remain unchanged even after annealing at 800 °C for 90 min, while for those without F+ implantation, the film properties begin to degrade after annealing at 750 °C as observed by scanning electron microscopic inspection, Auger electron spectroscopy analysis, Rutherford backscattering spectroscopy analysis, and sheet resistance measurement. The secondary ion mass spectroscopy analysis indicates that the fluorine atoms are segregated to the PtSi/Si interface. A fluorine barrier model is proposed to explain the absence of Pt in-diffusion induced deterioration for the F+-implanted PtSi film.This publication has 7 references indexed in Scilit:
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