Equilibrium structure of Si(001) in relation to adsorption processes during silicon CVD
- 1 July 1990
- journal article
- Published by Elsevier in Surface Science
- Vol. 233 (1) , 123-130
- https://doi.org/10.1016/0039-6028(90)90183-9
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Interaction of hydrogen with solid surfacesPublished by Elsevier ,2002
- Influence of temperature on the crystal habit of silicon in the SiHCl CVD system I. Experimental resultsJournal of Crystal Growth, 1989
- Adsorption on Si(111) during CVD of silicon from silane: The effect of temperature, bond strength, supersaturation and pressureJournal of Crystal Growth, 1986
- On the influence of surface reconstruction on crystal growth processesSurface Science, 1985
- Computer simulation of local order in condensed phases of siliconPhysical Review B, 1985
- A comparative study of the (111), (110) and (100) surfaces of silicon using the local density of states method applied to the bond orbital modelJournal of Physics C: Solid State Physics, 1976
- Surface reconstruction on semiconductorsSurface Science, 1976
- On the relations between structure and morphology of crystals. IIActa Crystallographica, 1955
- On the relations between structure and morphology of crystals. IIIActa Crystallographica, 1955
- On the relations between structure and morphology of crystals. IActa Crystallographica, 1955