Adsorption on Si(111) during CVD of silicon from silane: The effect of temperature, bond strength, supersaturation and pressure
- 1 November 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 78 (2) , 303-321
- https://doi.org/10.1016/0022-0248(86)90066-7
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Epitaxial Growth of Silicon by CVD in a Hot‐Wall FurnaceJournal of the Electrochemical Society, 1985
- The adsorption of PH3 on Si(100) and its effect on the coadsorption of SiH4Journal of Vacuum Science & Technology A, 1984
- Reactions of atomic hydrogen with the Si(111) (7×7) surface by high resolution electron energy loss spectroscopyThe Journal of Chemical Physics, 1983
- Modeling of chemical vapor depositionJournal of Crystal Growth, 1982
- JANAF Thermochemical Tables, 1982 SupplementJournal of Physical and Chemical Reference Data, 1982
- Adsorbed layers on (111)InAs faces in contact with In-As-Cl-H gas phase, and the possibility of phase transitions in the adsorbed layersJournal of Crystal Growth, 1981
- Theoretical analysis of equilibrium adsorption layers in CVD systems (Si-H-Cl, Ga-As-H-Cl)Journal of Crystal Growth, 1978
- JANAF thermochemical tables, 1978 supplementJournal of Physical and Chemical Reference Data, 1978
- Growth kinetics and capture of impurities during gas phase crystallizationJournal of Crystal Growth, 1977
- Interplay of the monohydride phase and a newly discovered dihydride phase in chemisorption of H on Si(100)2 × 1Physical Review B, 1976