Detuning adjustable multiwavelength MQW-DFB laser array grown by effective index/quantum energy control selective area MOVPE
- 1 July 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 6 (7) , 789-791
- https://doi.org/10.1109/68.311455
Abstract
A multiwavelength MQW DFB laser array with novel structure Is described. Oscillation wavelength and gain peak wavelength were simultaneously controlled on the same epitaxial wafer by using modulated grown thicknesses of selectively grown InGaAs/InGaAsP/InP MQW active waveguides. The laser array with constant-pitch built-in corrugation fabricated by a simple DFB laser process demonstrated 10.1 nm controllable range for lasing wavelength and 45 nm for gain peak wavelengths, with uniform lasing properties and narrow spectral linewidths. The technique is attractive for light sources used in WDM/FDM applications.Keywords
This publication has 4 references indexed in Scilit:
- Integration of a multi-wavelength compressive-strained multi-quantum-well distributed-feedback laser array with a star coupler and optical amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Selective metalorganic vapor phase epitaxial growth of InGaAsP / InP layers with bandgap energy control in InGaAs / InGaAsP multiple-quantum well structuresJournal of Crystal Growth, 1993
- Ultra-low-threshold, high-bandwidth, very-low noise operation of 1.52 mu m GaInAsP/InP DFB buried ridge structure laser diodes entirely grown by MOCVDIEEE Journal of Quantum Electronics, 1989
- 1.55 μm DFB laser array with λ/4-shifted first-order gratings fabricated by X-ray lithographyElectronics Letters, 1989