Preparation and Properties of GaAs-Si Heterojunctions by Solution Growth Method
- 1 July 1967
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 6 (7) , 854-863
- https://doi.org/10.1143/jjap.6.854
Abstract
GaAs-Si heterojunctions were fabricated successfully by the travelling solvent method, where liquid gallium was used as the molten zone, Si as the substrate and GaAs as the source material. The thickness of the GaAs layer grown on the Si substrate was 20∼55 µ m for the growth period of 2∼10 hours at 880°C∼830°C. Single-crystallinity was confirmed by etching studies of the cross-sectioned junctions and by Laue backscatter X-ray data. Some properties of the GaAs-Si heterojunction were examined from the electrical characteristics. The formation of the GaAs-Si heterojunction was also confirmed from the photoelectrical properties.Keywords
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