Monte Carlo simulation of real-space transfer transistors: device physics and scaling effects
- 1 March 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 40 (3) , 480-486
- https://doi.org/10.1109/16.199350
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- High-Frequency Characteristics of Charge-Injection Transistor-Mode Operation in AlGaAs/InGaAs/GaAs Metal-Insulator-Semiconductor Field-Effect TransistorsJapanese Journal of Applied Physics, 1991
- Charge injection transistors and logic circuitsSuperlattices and Microstructures, 1990
- Improved microwave performance in transistors based on real space electron transferApplied Physics Letters, 1990
- Real space transfer: Generalized approach to transport in confined geometriesSolid-State Electronics, 1988
- Ionized impurity scattering in Monte Carlo calculationsJournal of Applied Physics, 1986
- GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applicationsJournal of Applied Physics, 1985
- Novel real-space hot-electron transfer devicesIEEE Electron Device Letters, 1983
- Reconciliation of the Conwell-Weisskopf and Brooks-Herring formulae for charged-impurity scattering in semiconductors: Third-body interferenceJournal of Physics C: Solid State Physics, 1977
- Alloy scattering in ternary III-V compoundsPhysical Review B, 1976
- Monte Carlo determination of electron transport properties in gallium arsenideJournal of Physics and Chemistry of Solids, 1970