A Large-Signal Model for the GaAs MESFET

This publication has 18 references indexed in Scilit:

• A Technique for Predicting Large-Signal Performance of a GaAs MESFET
  IEEE Transactions on Microwave Theory and Techniques, 1978
• Two-dimensional numerical analysis of stability criteria of GaAs FET's
  IEEE Transactions on Electron Devices, 1976
• Performance of GaAs MESFET Mixers at X Band
  IEEE Transactions on Microwave Theory and Techniques, 1976
• Design and Performance of X-Band Oscillators with GaAs Schottky-Gate Field-Effect Transistors
  IEEE Transactions on Microwave Theory and Techniques, 1975
• Current saturation and small-signal characteristics of GaAs field-effect transistors
  IEEE Transactions on Electron Devices, 1973
• Two-Dimensional Distributed Theory Schottky Barrier Field Effect for a Microwave Transistor
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1973
• A two-dimensional numerical FET model for DC, AC, and large-signal analysis
  IEEE Transactions on Electron Devices, 1973
• Voltage-current characteristics of GaAs J-FET's in the hot electron range
  Solid-State Electronics, 1970
• Computer Aided Two-dimensional Analysis of the Junction Field-effect Transistor
  IBM Journal of Research and Development, 1970
• General theory for pinched operation of the junction-gate FET
  Solid-State Electronics, 1969