Effects of stress on the electrical activation of implanted Si in GaAs
- 17 July 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (3) , 274-276
- https://doi.org/10.1063/1.101927
Abstract
The effects of various plasma-enhanced chemical vapor deposition SiNx encapsulating films on the electrical activation of ion-implanted 29Si+ in GaAs were investigated. Films inducing the most tensile stress in the GaAs resulted in the lowest activation efficiency and films inducing the most compressive resulted in the highest. The results suggest that ratio of donors to acceptors, SiGa:SiAs, is a sensitive function of the stress state during the activation anneal.Keywords
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