Correlation between chemical and electrical profiles in Si+, Se+ and S+ implanted bulk and epitaxial GaAs
- 1 November 1982
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 11 (6) , 1083-1114
- https://doi.org/10.1007/bf02658918
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Dependence of implanted Se and S profiles on GaAs implantation temperature and crystallinityApplied Physics Letters, 1981
- Study of cr, si and mn distribution in semi-insulating gaas after annealing with and without SiO2 in an H2-AS4 atmosphereJournal of Electronic Materials, 1981
- Cr profiles in semi-insulating GaAs after annealing with and without SiO2 encapsulants in a H2-As4 atmosphereApplied Physics Letters, 1980
- Chromium concentrations, depth distributions, and diffusion coefficient in bulk and epitaxial GaAs and in SiApplied Physics Letters, 1980
- Suppression of thermal conversion in Cr-doped semi-insulating GaAsJournal of Applied Physics, 1979
- Redistribution of Cr during annealing of 80Se-implanted GaAsApplied Physics Letters, 1979
- Chromium profiles in semi-insulating GaAs after annealing with a Si3N4 encapsulantApplied Physics Letters, 1979
- GaAs Hall-effect devices fabricated by ion-implantation techniqueElectronics Letters, 1978
- On the ion implantation of the group VI impurities into GaAsSolid-State Electronics, 1978
- The role of elevated temperatures in the implantation of GaAsSolid-State Electronics, 1975