Study of cr, si and mn distribution in semi-insulating gaas after annealing with and without SiO2 in an H2-AS4 atmosphere
- 1 November 1981
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 10 (6) , 973-986
- https://doi.org/10.1007/bf02661187
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Study of electrical and chemical profiles of Si implanted in semi-insulating GaAs substrate annealed under SiO2 and caplessJournal of Applied Physics, 1981
- Cr profiles in semi-insulating GaAs after annealing with and without SiO2 encapsulants in a H2-As4 atmosphereApplied Physics Letters, 1980
- Thermal conversion of GaAsJournal of Applied Physics, 1980
- Effects of Cr redistribution on electrical characteristics of ion-implanted semi-insulating GaAsIEEE Electron Device Letters, 1980
- Chromium concentrations, depth distributions, and diffusion coefficient in bulk and epitaxial GaAs and in SiApplied Physics Letters, 1980
- Suppression of thermal conversion in Cr-doped semi-insulating GaAsJournal of Applied Physics, 1979
- Redistribution of Cr during annealing of 80Se-implanted GaAsApplied Physics Letters, 1979
- Chromium profiles in semi-insulating GaAs after annealing with a Si3N4 encapsulantApplied Physics Letters, 1979
- Photoluminescence in Mn-implanted GaAs—An explanation on the ∼1.40-eV emissionJournal of Applied Physics, 1979
- Hall coefficient factor for polar mode scattering in n-type GaAsJournal of Physics and Chemistry of Solids, 1970